High-Power Supersymmetric Semiconductor Laser with a Narrow Linewidth

We have designed and fabricated a kind of supersymmetric slotted Fabry–Perot semiconductor laser near 1550 nm to achieve single-mode, high-power, narrow-linewidth operation. The structure the is composed an electrically pumped broad ridge waveguide in middle provide optical gain, group periodic slots etched front facet suppress extra longitudinal modes narrow linewidth, pair passive superpartner waveguides located on both sides filter out high-order lateral waveguide. device measured under temperature 25 °C shows output power 113 mW, single-lobe far-field distribution with full width at half maximum 7.8°, peak wavelength 1559.7 side-mode suppression ratio 48.5 dB, intrinsic linewidth 230 kHz bias current 800 mA. promising candidate for cost-effective light sources coherent communication systems LiDARs.